Semiconductor

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Physics Interfaces and Study Types
ExpandElectrostatics with charge conservationYes
ExpandSemiconductorYes
ExpandSemiconductor Optoelectronics, Beam Envelopes*YesYes
ExpandSemiconductor Optoelectronics, Frequency Domain*YesYes
Boundary Conditions
Surface Charge DensityYes
Thin Insulator GateYes
ExpandContinuity/HeterojunctionYes
ExpandElectrostatics Boundary ConditionsYes
ExpandInsulationYes
ExpandInsulator InterfaceYes
ExpandMetal ContactYes
Carrier Statistics
Fermi-DiracYes
Maxwell-BoltzmannYes
Discretization
Finite ElementYes
Finite Element (Log Equation Formulation)Yes
Finite VolumeYes
Volumetric Domain Properties
ExpandElectrostatics Domain PropertiesYes
ExpandSemiconductor Material ModelYes
Doping
ExpandAnalytic Doping ModelYes
ExpandGeometric Doping ModelYes
Generation-Recombination
Auger RecombinationYes
Direct RecombinationYes
Impact Ionization GenerationYes
Shockley-Read-Hall RecombinationYes
User-Defined GenerationYes
User-Defined RecombinationYes
Mobility Models
Arora Mobility ModelYes
Caughey-Thomas Mobility ModelYes
Fletcher Mobility ModelYes
Lombardi Surface Mobility ModelYes
Power Law Mobility ModelYes
User Defined Mobility ModelYes
Optoelectronics
ExpandIndirect Optical TransitionsYes
ExpandOptical TransitionsYes
Trap Density
ExpandAnalytic Trap DensityYes
ExpandGeometric Trap DensityYes
* = Requires all indicated products