InGaN/AlGaN Double Heterostructure LED

Application ID: 20299


This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted recombination processes. This results in a sub-linear increase in emission intensity with increasing current, which is a common characteristic of LED devices known as LED droop. Note that polarization charge effects and quantum confinement effects within the thin active region are not included in the model.

This model example illustrates applications of this type that would nominally be built using the following products:

Semiconductor Module