Chemical Vapor Deposition of GaAs

Model ID: 945

Chemical vapor deposition (CVD) allows a thin film to be grown on a substrate through molecules and molecular fragments adsorbing and reacting on a surface. This example illustrates the modeling of such a CVD reactor where triethyl-gallium first decomposes, and the reaction products along with arsine (AsH3) adsorb and react on a substrate to form GaAs layers.

The CVD system is modeled using momentum, energy, and mass balances including a detailed description of the gas phase and adsorption kinetics. A reduced reaction scheme is compared to the full scheme in the Reaction Engineering interface.